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PD - 97208 IRGP4065PBF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25C c TJ max C 300 1.75 205 150 C E C G V V A C G E n-channel G Gate C Collector TO-247AC E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N Max. 30 70 40 205 178 71 1.4 -40 to + 150 Units V A W W/C C Thermal Resistance Parameter RCS RJA Typ. --- 0.24 --- Max. 0.80 --- 40 Units C/W RJC Junction-to-Case d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) www.irf.com 1 05/10/06 IRGP4065PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVCES VCES/TJ Min. Typ. Max. Units --- 0.23 1.20 1.35 1.75 2.35 2.00 --- -11 2.0 50 --- --- 26 62 20 --- 875 975 2200 110 55 5.0 13 Conditions VCE(on) VGE(th) VGE(th)/TJ ICES IGES gfe Qg Qgc tst EPULSE Collector-to-Emitter Breakdown Voltage 300 Breakdown Voltage Temp. Coefficient --- --- --- Static Collector-to-Emitter Voltage --- --- --- Gate Threshold Voltage 2.6 Gate Threshold Voltage Coefficient --- Collector-to-Emitter Leakage Current --- --- Gate-to-Emitter Forward Leakage --- Gate-to-Emitter Reverse Leakage --- Forward Transconductance --- Total Gate Charge --- Gate-to-Collector Charge --- Shoot Through Blocking Time 100 Energy per Pulse --- --- Ciss Coss Crss LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance --- --- --- --- --- --- V VGE = 0V, ICE = 1 mA --- V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 25A e 1.40 VGE = 15V, ICE = 40A e --- 2.10 V VGE = 15V, ICE = 70A e VGE = 15V, ICE = 120A e --- VGE = 15V, ICE = 70A, TJ = 150C --- 5.0 V VCE = VGE, ICE = 500A --- mV/C 25 A VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150C --- 100 nA VGE = 30V VGE = -30V -100 --- S VCE = 25V, ICE = 25A --- nC VCE = 200V, IC = 25A, VGE = 15Ve --- --- ns VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V --- J VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V --- VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V --- --- pF VCE = 30V --- --- nH --- = 1.0MHz, See Fig.13 Between lead, 6mm (0.25in.) from package and center of die contact Notes: Half sine wave with duty cycle = 0.25, ton=1sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRGP4065PBF 200 200 160 TOP ICE (A) BOTTOM ICE (A) 120 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 160 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 120 BOTTOM 80 80 40 40 0 0 2 4 6 8 10 12 14 16 VCE (V) 0 0 2 4 6 8 10 12 14 16 VCE (V) Fig 1. Typical Output Characteristics @ 25C 280 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE Fig 2. Typical Output Characteristics @ 75C 360 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 240 200 ICE (A) BOTTOM 320 280 240 ICE (A) BOTTOM 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) 200 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) Fig 3. Typical Output Characteristics @ 125C 600 ICE, Collector-to-Emitter Current (A) Fig 4. Typical Output Characteristics @ 150C 20 IC = 25A 500 15 400 300 200 T J = 25C T J = 125C VCE (V) 10 T J = 25C T J = 150C 5 100 0 0 5 10 15 20 VGE, Gate-to-Emitter Voltage (V) 0 0 5 10 VGE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRGP4065PBF 80 70 IC, Collector Current (A) 220 200 Repetitive Peak Current (A) 180 160 140 120 100 80 60 40 20 0 ton= 1s Duty cycle = 0.25 Half Sine Wave 60 50 40 30 20 10 0 0 25 50 75 100 125 150 25 50 75 100 125 150 Fig 7. Maximum Collector Current vs. Case Temperature 1000 V CC = 240V 900 Energy per Pulse (J) T C, Case Temperature (C) Case Temperature (C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1000 L = 220nH C = 0.4F 100C L = 220nH C = variable 900 Energy per Pulse (J) 100C 800 700 600 500 400 300 200 800 700 600 500 400 160 170 180 190 200 210 220 230 25C 25C 150 160 170 180 190 200 210 220 230 240 VCE, Collector-to-Emitter Voltage (V) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current 1400 V CC = 240V 1200 Energy per Pulse (J) Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 OPERATION IN THIS AREA LIMITED BY V CE(on) L = 220nH t = 1s half sine C= 0.4F 1000 800 600 C= 0.2F 400 200 25 50 75 100 125 150 TJ, Temperature (C) 100 IC (A) C= 0.3F 10sec 100sec 10 1msec 1 1 10 VCE (V) 100 1000 Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4 www.irf.com IRGP4065PBF 100000 VGS = 0V, f = 1 MHZ C ies = C ge + C gd , C ce SHORTED Cres = C gc Coes = Cce + Cgc 25 IC = 25A VGE, Gate-to-Emitter Voltage (V) 10000 Capacitance (pF) 20 VCE = 240V VCE = 200V VCE = 150V Cies 1000 15 10 100 Coes Cres 5 10 0 50 100 150 200 250 300 VCE, Collector-toEmitter-Voltage(V) 0 0 10 20 30 40 50 60 70 80 Q G, Total Gate Charge (nC) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 D = 0.50 Thermal Response ( Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 J J 1 1 R1 R1 2 R2 R2 R3 R3 3 C 3 Ri (C/W) i (sec) 0.146 0.000131 0.382 0.271 0.001707 0.014532 0.01 2 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRGP4065PBF A RG DRIVER L C PULSE A VCC B PULSE B RG Ipulse DUT tST Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms VCE Energy IC Current 0 L DUT 1K VCC Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off) 6 www.irf.com IRGP4065PBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6 ,6 $1 ,5)3( :,7+ $66(0%/< /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( + 1RWH 3 LQ DVVHPEO\ OLQH SRVLWLRQ LQGLFDWHV /HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27 &2'( 3$57 180%(5 ,5)3( A "$C $%AAAAAAAAAAA$& '$7( &2'( <($5 :((. /,1( + TO-247AC package is not recommended for Surface Mount Application. The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/06 www.irf.com 7 |
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